Power Efficiency and Reliability

WBG materials are at the heart of the continued challenge to improve the performance of SiC and GaN for faster switching speeds, higher power density, high temperature operation, reliability, size, and cost.

Precision voltage and current measurements are needed to understand a SiC or GaN device’s fundamental properties and electrical performance.

I-V characterization is the process of measuring the current-voltage relationship of electronic devices. It's crucial for device testing and optimization and for developing wide bandgap semiconductors. 

Double pulse testing is the standard method for measuring the switching parameters of MOSFETs or IGBT power devices. Historically this has been a time consuming process to set up the double pulse test since function generators do not have a built-in way to configure and set up the test.

Designing new SiC and GaN devices requires a great deal of testing, both during design and production phases in order to drive process improvements, improve yields, and lower cost. Testing WBG power devices requires better resolution, higher power, and faster speeds compared to traditional silicon.

Power Management devices are the “Unsung Heroes”, essential components that support safe and proper operations of electronic systems behind the scenes.